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| PZTA29 NPN Darlington Transistor PZTA29 NPN Darlington Transistor * This device designed for applications requiring extremely high current gain at collector currents to 500mA. * Sourced from process 03. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * T Symbol VCES VCBO VEBO IC TJ, TSTG NOTES: a = 25C unless otherwise noted Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Value 100 100 12 800 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations Electrical Characteristics Symbol Off Characteristics V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO Ta = 25C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cut-off Current Conditions IC = 100A, VBE = 0 IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 80V, IE = 0 VCE = 80V, VBE = 0 VEB = 10V, IC = 0 Min. 100 100 12 Max Units V V V 100 500 100 nA nA nA On Characteristics hFE VCE(sat) VBE(on) fT Cobo DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 5.0V, IC = 10mA VCE = 5.0V, IC = 100mA IC = 10mA, IB = 0.01mA IC = 100mA, IB = 0.1mA IC = 100mA, VCE = 5.0V IC = 10mA, VCE = 5.0V, f = 100MHz VCB = 1.0V, IE = 0, f = 1.0MHz 125 8.0 10,000 10,000 1.2 1.5 2.0 V V V Small Signal characteristics Current Gain Bandwidth Product Output Capacitance MHz pF * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com PZTA29 Rev. A PZTA29 NPN Darlington Transistor Thermal Characteristics Symbol PD RJA Ta = 25C unless otherwise noted Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient 6cm2 Max. 1,000 8.0 125 Units mW mW/C C/W * Device mounted on FR-4PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 2 PZTA29 Rev. A www.fairchildsemi.com PZTA29 NPN Darlington Transistor Mechanical Dimensions SOT-223 Dimensions in Millimeters 3 PZTA29 Rev. A www.fairchildsemi.com PZTA29 NPN Darlington Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I15 4 PZTA29 Rev. A www.fairchildsemi.com |
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